Shenzhen Hengstar Technology Co., Ltd.

Shenzhen Hengstar Technology Co., Ltd.

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Shenzhen Hengstar Technology Co., Ltd.
HomeProdottiAċċessorji tal-Modulu Intelliġenti IndustrijaliSpeċifikazzjonijiet tal-Modulu tal-Memorja DDR3 UDIMM

Speċifikazzjonijiet tal-Modulu tal-Memorja DDR3 UDIMM

Tip ta 'Ħlas:
L/C,T/T,D/A
Incoterm:
FOB,EXW,CIF
Min. Ordni:
1 Piece/Pieces
Trasport:
Ocean,Air,Express,Land
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  • Deskrizzjoni tal-prodott
Overview
Attributi tal-Prodott

Mudell Nru.NSO4GU3AB

Abbiltà tal-Provvista u Informazzjoniji...

TrasportOcean,Air,Express,Land

Tip ta 'ĦlasL/C,T/T,D/A

IncotermFOB,EXW,CIF

Ippakkjar u Kunsinna
Unitajiet tal-Bejgħ:
Piece/Pieces

4GB 1600MHz 240-PIN DDR3 UDIMM


Storja tar-Reviżjoni

Revision No.

History

Draft Date

Remark

1.0

Initial Release

Apr. 2022

 

Tordna tabella ta 'informazzjoni

Model

Density

Speed

Organization

Component Composition

NS04GU3AB

4GB

1600MHz

512Mx64bit

DDR3 256Mx8 *16


Deskrizzjoni
HENGSTAR DIMMs SDRAM DDR3 UNBUFERED (rata ta 'dejta doppja mhux imqabbda Dram Dram Dual doppju moduli ta' memorja in-line) huma moduli ta 'memorja ta' tħaddim b'veloċità għolja, b'veloċità għolja li jużaw apparati DDR3 SDRAM. NS04GU3AB huwa 512M x 64-bit żewġ grad 4GB DDR3-1600 CL11 1.5V SDRAM Prodott DIMM mhux imqabbad, ibbażat fuq sittax-il komponenti FBGA ta 'sittax-il 256m x 8-bit. L-SPD huwa pprogrammat għall-istandard JEDEC Latency DDR3-1600 Żmien ta '11 -11-11 f'1.5V. Kull DIMM ta '240 pin juża swaba' ta 'kuntatt tad-deheb. L-SDRAM DIMM mhux imbattal huwa maħsub għall-użu bħala memorja ewlenija meta jkun installat f'sistemi bħal PCs u stazzjonijiet tax-xogħol.


Karatteristiċi
Provvista tal-Power: VDD = 1.5V (1.425V sa 1.575V)
VDDQ = 1.5V (1.425V sa 1.575V)
800MHz FCK għal 1600MB / sek / pin
8 Bank Intern Indipendenti
 Latency CAS Programmable: 11, 10, 9, 8, 7, 6
 Latenza tal-addittivi pprogrammabbli: 0, cl - 2, jew cl - 1 arloġġ
8-bit qabel il-bidu
 Tul tal -burst: 8 (interleave mingħajr l-ebda limitu, sekwenzjali bl-indirizz tal-bidu "000" biss), 4 ma 'TCCD = 4 li ma jippermettix li taqra jew tikteb bla xkiel [jew fuq il-fly billi tuża A12 jew MRS]
BI DIREZZJONALI TAD-DIREZZJONALI DIFERJALI STROBE
 Kalibrazzjoni Interna (awto); Kalibrazzjoni interna tal-awto permezz tal-pin ZQ (RZQ: 240 ohm ± 1%)
 Waqt it-terminazzjoni tad-die bl-użu tal-pin ODT
 Perjodu ta 'aġġornament ta' aġġornament 7.8US f'inqas minn TCase 85 ° C, 3.9US f'85 ° C <TCASE <95 ° C
Reset Reset
 Is-saħħa tas-sewqan tad-dejta aġġustabbli
Fly-by topology
PCB: għoli 1.18 ”(30mm)
Ohs konformi u ħielsa mill-aloġeni


Parametri ewlenin tal-ħin

MT/s

tRCD(ns)

tRP(ns)

tRC(ns)

CL-tRCD-tRP

DDR3-1600

13.125

13.125

48.125

2011/11/11


Tabella tal-Indirizz

Configuration

Refresh count

Row address

Device bank address

Device configuration

Column Address

Module rank address

4GB

8K

32K A[14:0]

8 BA[2:0]

2Gb (256 Meg x 8)

1K A[9:0]

2 S#[1:0]


Deskrizzjonijiet tal-PIN

Symbol

Type

Description

Ax

Input

Address inputs: Provide the row address  for ACTIVE commands, and the column
address and auto precharge bit (A10) for READ/WRITE commands, to select one location
out of the memory array in the respective bank. A10 sampled during a PRECHARGE
command determines whether the PRECHARGE applies to one bank (A10 LOW, bank
selected by BAx) or all banks (A10 HIGH). The address inputs also provide the op-code
during a LOAD MODE command. See the Pin Assignments table for density-specific
addressing information.

BAx

Input

Bank address inputs: Define the device bank to which an ACTIVE, READ, WRITE, or
PRECHARGE command is being applied. BA define which mode register (MR0, MR1,
MR2, or MR3) is loaded during the LOAD MODE command.

CKx,
CKx#

Input

Clock: Differential clock inputs. All control, command, and address input signals are
sampled on the crossing of the positive edge of CK and the negative edge of CK#.

CKEx

Input

Clock enable: Enables (registered HIGH) and disables (registered LOW) internal circuitry
and clocks on the DRAM.

DMx

Input

Data mask (x8 devices only): DM is an input mask signal for write data. Input data is
masked when DM is sampled HIGH, along with that input data, during a write access.
Although DM pins are input-only, DM loading is designed to match that of the DQ and DQS pins.

ODTx

Input

On-die  termination:  Enables  (registered  HIGH)  and  disables  (registered  LOW)
termination resistance internal to the DDR3 SDRAM. When enabled in normal operation,
ODT is only applied to the following pins: DQ, DQS, DQS#, DM, and CB. The ODT input will be ignored if disabled via the LOAD MODE command.

Par_In

Input

Parity input: Parity bit for Ax, RAS#, CAS#, and WE#.

RAS#,
CAS#,
WE#

Input

Command inputs: RAS#, CAS#, and WE# (along with S#) define the command being
entered.

RESET#

Input
(LVCMOS)

Reset: RESET# is an active LOW asychronous input that is connected to each DRAM and
the registering clock driver. After RESET# goes HIGH, the DRAM must be reinitialized as
though a normal power-up was executed.

Sx#

Input

Chip select: Enables (registered LOW) and disables (registered HIGH) the command
decoder.

SAx

Input

Serial address inputs: Used to configure the temperature sensor/SPD EEPROM address
range on the I2C bus.

SCL

Input

Serial
communication to and from the temperature sensor/SPD EEPROM on the I2C bus.

CBx

I/O

Check bits: Used for system error detection and correction.

DQx

I/O

Data input/output: Bidirectional data bus.

DQSx,
DQSx#

I/O

Data strobe: Differential data strobes. Output with read data; edge-aligned with read data;
input with write data; center-alig

SDA

I/O

Serial
sensor/SPD EEPROM on the I2C bus.

TDQSx,
TDQSx#

Output

Redundant data strobe (x8 devices only): TDQS is enabled/disabled via the LOAD
MODE command to the extended mode register (EMR). When TDQS is enabled, DM is
disabled and TDQS and TDQS# provide termination resistance; otherwise, TDQS# are no
function.

Err_Out#

Output (open
drain)

Parity error output: Parity error found on the command and address bus.

EVENT#

Output (open
drain)

Temperature event: The EVENT# pin is asserted by the temperature sensor when critical
temperature thresholds have been exceeded.

VDD

Supply

Power supply: 1.35V (1.283–1.45V) backward-compatible to 1.5V (1.425–1.575V). The
component VDD and VDDQ are connected to the module VDD.

VDDSPD

Supply

Temperature sensor/SPD EEPROM power supply: 3.0–3.6V.

VREFCA

Supply

Reference voltage: Control, command, and address VDD/2.

VREFDQ

Supply

Reference voltage: DQ, DM VDD/2.

VSS

Supply

Ground.

VTT

Supply

Termination voltage: Used for control, command, and address VDD/2.

NC

No connect: These pins are not connected on the module.

NF

No function: These pins are connected within the module, but provide no functionality.

Noti It-tabella tad-deskrizzjoni tal-pin hawn taħt hija lista komprensiva tal-pinnijiet kollha possibbli għall-moduli DDR3 kollha. Il-labar kollha elenkati jistgħu ma tkunx appoġġjat fuq dan il-modulu. Ara l-assenjazzjonijiet tal-PIN għal informazzjoni speċifika għal dan il-modulu.


Dijagramma tal-blokka funzjonali

4GB, 512mx64 Modulu (2Rank ta 'X8)

1


2


Nota:
1.Il-ballun ZQ fuq kull komponent DDR3 huwa konness ma 'resister estern ta' 240Ω ± 1% li huwa marbut mal-art. Jintuża għall-kalibrazzjoni tat-tmiem tal-komponent fuq it-terminazzjoni u s-sewwieq tal-ħruġ.



Dimensjonijiet tal-modulu


Veduta ta 'quddiem

3

Veduta ta 'quddiem

4

Noti:
1. Id-dimensjonijiet kollha huma f'millimetri (pulzieri); Massimu / min jew tipiku (tip) fejn innotat.
2.Tolleranza fuq id-dimensjonijiet kollha ± 0.15mm sakemm ma jkunx speċifikat mod ieħor.
3. Id-dijagramma dimensjonali hija għal referenza biss.

Kategoriji tal-Prodott : Aċċessorji tal-Modulu Intelliġenti Industrijali

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